Ulitsa Marx, Russia

Lydia Ivanovna Gorchakova

This inventor holds 1 USPTO granted patent. Top assignee: British Technology Group Limited. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lydia Ivanovna Gorchakova. Retrieved from https://idiyas.com/inventor/lydia-ivanovna-gorchakova

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Lydia Ivanovna Gorchakova: Innovator in Boron Nitride Technology

Introduction

Lydia Ivanovna Gorchakova is a notable inventor based in Ulitsa Marx, Russia. She has made significant contributions to the field of materials science, particularly with her work on boron nitride. Her innovative approach has led to the development of a patent that showcases her expertise and dedication to advancing technology.

Latest Patents

Lydia holds a patent for boron nitride, which is recognized for its unique properties and applications in various industries. This patent highlights her ability to create solutions that address complex challenges in material science.

Career Highlights

Throughout her career, Lydia has been associated with British Technology Group Limited, where she has furthered her research and development efforts. Her work has not only contributed to her personal achievements but has also enhanced the reputation of her organization in the field of technology.

Collaborations

Lydia has collaborated with talented individuals such as Lydia Nikolaevna Rusanova and Michael Kirillovia Alexeev. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Lydia Ivanovna Gorchakova is a pioneering inventor whose work in boron nitride technology exemplifies her commitment to innovation. Her contributions continue to influence the field and inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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