Hangzhou City, China

Lvqiang Li

This inventor holds 1 USPTO granted patent. Top assignee: Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lvqiang Li. Retrieved from https://idiyas.com/inventor/lvqiang-li-6u2xc96n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Lvqiang Li and His Semiconductor Device Patent.

Introduction

Lvqiang Li is an inventor based in Hangzhou City, China. His patent work concerns semiconductor device design.

Latest Patents

Li is associated with one patent: “SUPER-JUNCTION SEMICONDUCTOR DEVICE WITH ENLARGED PROCESS WINDOW FOR DESIRABLE BREAKDOWN VOLTAGE.”

Career Highlights

Li is associated with Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd. His patent focuses on a super-junction semiconductor device designed to provide a wider process window while achieving a desirable breakdown voltage.

Collaborations

Li’s listed coworkers include Hui Chen and Jiakun Wang.

Conclusion

Lvqiang Li’s recorded patent activity highlights his work on semiconductor device design and his association with Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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