Company Filing History:
1 out of 15 
1 out of 8 Years Active: 2025-2026
Title: Innovations of Lvqiang Li in Semiconductor Technology.
Introduction
Lvqiang Li is a notable inventor based in Hangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.
Latest Patents
His most recent patent is titled "Super-junction VDMOS device with low on-resistance." This invention features a super-junction structure that includes a first semiconductor pillar and a second semiconductor pillar. A HEMT structure with heterojunctions is formed between these pillars, which facilitates electrical conduction by inducing a two-dimensional electronic gas. This design significantly reduces the on-resistance of the VDMOS device. The voltage difference between the semiconductor pillars is utilized to control the cutting-off behavior of the HEMT structure, enhancing the device's high-voltage resistance.
Career Highlights
Lvqiang Li is currently associated with Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd. His work focuses on advancing semiconductor technologies that improve device performance and efficiency.
Collaborations
He collaborates with Hui Chen, contributing to the development of innovative semiconductor solutions.
Conclusion
Lvqiang Li's contributions to semiconductor technology, particularly through his patent on the super-junction VDMOS device, highlight his role as a key innovator in the field. His work continues to influence advancements in high-voltage semiconductor devices.