Company Filing History:
Years Active: 2015
Title: Lun Zhu - Innovator in Asymmetrical Gate MOS Technology
Introduction
Lun Zhu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on MOS devices. His research focuses on optimizing the performance parameters of these devices, which are crucial in modern electronics.
Latest Patents
Lun Zhu holds a patent for an "Asymmetrical gate MOS device and method of making." This invention discloses a unique design where the gate is a metal gate with differing work functions on the source and drain sides. This asymmetry enhances the overall performance of the MOS device. The method of creating this device involves implanting dopant ions into the gate, allowing for the optimization of performance parameters. This approach is not only effective but also easy to implement.
Career Highlights
Lun Zhu is affiliated with Fudan University, where he continues to engage in cutting-edge research. His work has garnered attention for its practical applications in the semiconductor industry. His innovative approach has positioned him as a key figure in advancing MOS technology.
Collaborations
Lun Zhu collaborates with notable colleagues, including Dongping Wu and Cheng Hu. Their combined expertise contributes to the success of their research initiatives and enhances the impact of their findings in the field.
Conclusion
Lun Zhu's contributions to the development of asymmetrical gate MOS devices represent a significant advancement in semiconductor technology. His innovative methods and collaborative efforts continue to influence the industry positively.