Milan, Italy

Luisarita Atzei

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Lam Research Corporation. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Luisarita Atzei. Retrieved from https://idiyas.com/inventor/luisarita-atzei

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Luisarita Atzei: Innovator in Plasma Technology

Introduction

Luisarita Atzei is a notable inventor based in Milan, Italy. He has made significant contributions to the field of semiconductor technology, particularly in methods that enhance the reliability of semiconductor substrates during plasma processing.

Latest Patents

Atzei holds a patent for "Methods for reducing plasma-induced charging damage." This innovative method is designed for use in a high-density plasma chamber. It protects semiconductor substrates from charging damage caused by plasma-induced current while etching through a conductive layer above the substrate. The method involves performing a bulk etch using a first power setting and a clearing etch with a minimized second power setting to reduce charging damage.

Career Highlights

Luisarita Atzei is currently employed at Lam Research Corporation, a leading company in semiconductor manufacturing equipment. His work focuses on improving processes that are critical for the fabrication of advanced semiconductor devices.

Collaborations

Atzei has collaborated with notable colleagues, including Roger Patrick and Stanley Chan Siu. Their combined expertise contributes to the advancement of technologies in the semiconductor industry.

Conclusion

Luisarita Atzei's innovative work in plasma technology and his patent for reducing plasma-induced charging damage highlight his significant role in the semiconductor field. His contributions continue to influence the development of more reliable semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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