Sant Cugat del Vallès, Spain

Luis Arenas Rivera

This inventor holds 1 USPTO granted patent. Top assignee: Hewlett-Packard Development Company, L.p.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Luis Arenas Rivera. Retrieved from https://idiyas.com/inventor/luis-arenas-rivera

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Luis Arenas Rivera and 3D-Printing Material Detection.

Introduction

Luis Arenas Rivera is an inventor associated with Sant Cugat del Vallès, Spain, and Hewlett-Packard Development Company, L.P. His patent work addresses a practical challenge in 3D printing: identifying excess build material during the formation of a layer.

Latest Patents

Rivera is associated with 1 patent, titled “Determining Excess Build Material.” The method provides an amount of build material and spreads it across a build platform to form a layer. Any excess material is left in an excess zone marked visibly, and those marks are analyzed to determine the amount of excess material in that zone. This approach uses visible indicators to support the monitoring of material during the printing process.

Career Highlights

Rivera’s listed invention focuses on detecting excess material in a 3D-printing workflow. The patent connects material spreading with analysis of visible marks, offering a method for assessing excess at the build platform.

Collaborations

His listed coworkers include Mohammad Jowkar and Yngvar Rossow Sethne. The patent information also associates Rivera with Hewlett-Packard Development Company, L.P.

Conclusion

Luis Arenas Rivera’s patent contribution centers on a visible-mark method for determining excess build material, linking his work to process monitoring in 3D printing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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