Bretigny sur Orge, France

Ludovic Largeau

This inventor holds 1 USPTO granted patent. Top assignee: Centre National De La Recherche Scientifique. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ludovic Largeau. Retrieved from https://idiyas.com/inventor/ludovic-largeau

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Ludovic Largeau: Innovator in Solid-State Semiconducting Heterostructures

Introduction

Ludovic Largeau is a prominent inventor based in Brétigny-sur-Orge, France. He has made significant contributions to the field of solid-state semiconductors, showcasing his expertise through innovative patents.

Latest Patents

Ludovic Largeau holds a patent for "Epitaxial solid-state semiconducting heterostructures and method for making same." This patent outlines a method for producing a solid-state semiconducting structure, which is crucial for advancements in semiconductor technology. He has 1 patent to his name, reflecting his focused contributions to this specialized area.

Career Highlights

Ludovic Largeau is affiliated with the Centre National de la Recherche Scientifique, a leading research institution in France. His work at this esteemed organization has allowed him to explore and develop cutting-edge technologies in the semiconductor field.

Collaborations

Throughout his career, Ludovic has collaborated with notable colleagues, including Guy Hollinger and Philippe Regreny. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.

Conclusion

Ludovic Largeau's contributions to the field of solid-state semiconductors exemplify his dedication to innovation and research. His patent and collaborations highlight his role as a key figure in advancing semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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