Company Filing History:
Years Active: 2010
Title: Ludovic Charpentier: Innovator in Silicon Carbide Technology
Introduction
Ludovic Charpentier is a prominent inventor based in Grenoble, France. He has made significant contributions to the field of materials science, particularly in the formation of single-crystal silicon carbide. His innovative work has led to the development of a patented device that enhances the production of high-quality silicon carbide.
Latest Patents
Ludovic Charpentier holds a patent for the "Formation of single-crystal silicon carbide." This invention concerns a device designed to form a compound body in a single-crystal state through incongruent evaporation. The device includes at least one chamber containing a substrate where a polycrystalline source and a monocrystalline germ of the body are formed. It also features a second chamber, with the substrate positioned between the two chambers, and means for inputting gaseous precursors to facilitate the deposition of the body in polycrystalline form. Additionally, heating means are employed to maintain the substrate at a temperature higher than that of the germ, promoting sublimation of the polycrystalline source and deposition on the germ in monocrystalline form. This patent represents a significant advancement in the production of silicon carbide materials.
Career Highlights
Ludovic Charpentier is affiliated with the Centre National de la Recherche Scientifique (CNRS), where he conducts research and development in materials science. His work has been instrumental in advancing the understanding and application of silicon carbide in various industries.
Collaborations
Throughout his career, Ludovic has collaborated with notable colleagues, including Roland Madar and Michel Pons. These collaborations have further enriched his research and contributed to the success of his innovative projects.
Conclusion
Ludovic Charpentier's contributions to the field of silicon carbide technology exemplify the impact of innovative thinking in materials science. His patented device for forming single-crystal silicon carbide is a testament to his expertise and dedication to advancing this important area of research.