The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2010
Filed:
May. 15, 2003
Roland Madar, Eybens, FR;
Michel Pons, La Tronche, FR;
Francis Baillet, Paladru, FR;
Ludovic Charpentier, Grenoble, FR;
Etienne Pernot, Sassenage, FR;
Didier Chaussende, Chamagnieu, FR;
Daniel Turover, Saint Mande, FR;
Roland Madar, Eybens, FR;
Michel Pons, La Tronche, FR;
Francis Baillet, Paladru, FR;
Ludovic Charpentier, Grenoble, FR;
Etienne Pernot, Sassenage, FR;
Didier Chaussende, Chamagnieu, FR;
Daniel Turover, Saint Mande, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Abstract
The invention concerns a device () for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber () containing a substrate () whereat is formed a polycrystalline source of said body and a monocrystalline germ () of said body; a second chamber (), said substrate being arranged between the two chambers; means for input () of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means () for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.