du Moucherotte, France

Lucile Arnaud

This inventor holds 1 USPTO granted patent. Top assignee: L'etat Francais Represente Par La Delegue General. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lucile Arnaud. Retrieved from https://idiyas.com/inventor/lucile-arnaud-n6tdwaft

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Lucile Arnaud: Innovator in Magnetic Memory Technology

Introduction

Lucile Arnaud is a prominent inventor based in du Moucherotte, France. She has made significant contributions to the field of magnetic memory technology. Her innovative work has led to the development of a unique patent that showcases her expertise and creativity.

Latest Patents

Lucile Arnaud holds a patent for a Bloch line magnetic memory. This invention features a magnetic film of thickness h located on a substrate, which includes Bloch lines of width .LAMBDA.o. The magnetic film satisfies the condition (1) h/.LAMBDA.o < 14, with .LAMBDA.o = √A/2πMs², where A represents the magnetic exchange constant and 4πMs represents the saturation magnetization of the film. This patent highlights her ability to push the boundaries of current technology.

Career Highlights

Lucile Arnaud is associated with L'Etat Français Représenté Par La Délégation Générale, where she continues to work on innovative projects. Her career is marked by her dedication to advancing magnetic memory technologies and her commitment to research and development.

Collaborations

Throughout her career, Lucile has collaborated with notable colleagues, including Ben J Youssef and Didier Challeton. These partnerships have contributed to her success and the advancement of her projects.

Conclusion

Lucile Arnaud is a trailblazer in the field of magnetic memory technology, with her patent for Bloch line magnetic memory exemplifying her innovative spirit. Her work continues to inspire future advancements in this critical area of research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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