This inventor holds 1 USPTO granted patent. Top assignee: Digital Equipment Corporation. Active years: 1996.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1996
Title: Luan Tran - Innovator in Memory Technology
Introduction
Luan Tran is a notable inventor based in San Jose, California. He has made significant contributions to the field of memory technology, particularly in the development of static random access memory (SRAM). His innovative work has led to the creation of a unique patent that enhances the functionality of memory devices.
Latest Patents
Luan Tran holds a patent for "Static random access memory having tunable-self-timed control logic." This invention describes a self-timed logic device that produces internal control and timing signals in response to an external signal. The circuit includes mechanisms that respond to a pulse signal for providing control and timing signals, as well as means that react to changes in the state of a signal fed to the device to generate the pulse signal. Additionally, the device allows for selective changes in timing characteristics in response to external tuning signals. This innovative logic device is particularly focused on improving static random access memory.
Career Highlights
Luan Tran has had a successful career at Digital Equipment Corporation, where he has been instrumental in advancing memory technology. His work has not only contributed to the company's reputation but has also influenced the broader field of electronics and computing.
Collaborations
Luan has collaborated with notable colleagues, including Hamid Partovi and Steven W. Butler. These partnerships have fostered an environment of innovation and creativity, leading to advancements in technology.
Conclusion
Luan Tran's contributions to the field of memory technology through his patent and work at Digital Equipment Corporation highlight his role as an influential inventor. His innovative approaches continue to shape the future of memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
