Lu Yuan

Title: Lu Yuan: Innovator in Non-Volatile Memory Technology

Introduction

Lu Yuan is a prominent inventor based in Lincoln, NE (US). She has made significant contributions to the field of non-volatile memory devices. Her innovative work focuses on the application of high spin polarization materials, which has the potential to revolutionize memory technology.

Latest Patents

Lu Yuan holds a patent titled "Application of high spin polarization materials in two terminal non-volatile bistable memory devices." This patent discloses two terminal bistable memory cells that feature at least two high-spin polarization magnetic material junctions. These junctions are separated by an electron trap site defect containing insulator. The memory cells demonstrate stable, low current readable, hysteretic resistance states. These states are set by the flow of a relatively high D.C. current, which is monitored by lower magnitude A.C. or D.C. current flow. Preferred cells include at least one CrO/CrO2/CrO sequence, but typically have multiple sequences in series.

Career Highlights

Lu Yuan is affiliated with the University of Nebraska, where she continues her research and development in memory technology. Her work has garnered attention for its innovative approach and practical applications in the field.

Collaborations

Some of her notable coworkers include Bernard Doudin and Andrei Sokolov. Their collaborative efforts contribute to advancing research in memory devices and materials.

Conclusion

Lu Yuan's contributions to the field of non-volatile memory technology highlight her innovative spirit and dedication to research. Her patent and ongoing work at the University of Nebraska position her as a key figure in the advancement of memory technology.