The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2003
Filed:
Apr. 30, 2002
Application of high spin polarization materials in two terminal non-volatile bistable memory devices
Bernard Doudin, Lincoln, NE (US);
Andrei Sokolov, Lincoln, NE (US);
Cheol-Soo Yang, Lincoln, NE (US);
Lu Yuan, Lincoln, NE (US);
Sy-Hwang Liou, Lincoln, NE (US);
Board of Regents of the University of Nebraska, Lincoln, NE (US);
Abstract
Disclosed are two terminal bistable memory cells having least two high-spin polarization magnetic material junctions which are separated from one another by electron trap site defect containing insulator. The two terminal bistable memory cells demonstrate stable, low current readable, hysteretic resistance states which are set by the flow of a relatively high, (eg. a milliamp or less), plus or minus polarity D.C. current therethrough, which resistance is monitored by lower magnitude A.C. or D.C. current flow therethrough. Preferred cells have at least one CrO /Cr O /CrO sequence but typically have multiple CrO /Cr O /CrO sequences in series.