Andrei Sokolov

Title: The Innovative Contributions of Andrei Sokolov

Introduction

Andrei Sokolov is a notable inventor based in Lincoln, NE (US). He has made significant contributions to the field of memory devices through his innovative research and patents. His work focuses on the application of high spin polarization materials in non-volatile bistable memory devices.

Latest Patents

Sokolov holds a patent for the "Application of high spin polarization materials in two terminal non-volatile bistable memory devices." This patent discloses two terminal bistable memory cells that feature at least two high-spin polarization magnetic material junctions. These junctions are separated by an electron trap site defect containing insulator. The memory cells demonstrate stable, low current readable, hysteretic resistance states, which are set by the flow of a relatively high D.C. current. The resistance is monitored by a lower magnitude A.C. or D.C. current flow. Preferred cells include at least one CrO/CrO2/CrO sequence, but typically have multiple sequences in series.

Career Highlights

Andrei Sokolov is affiliated with the University of Nebraska, where he continues to advance his research in memory technology. His work has garnered attention for its potential applications in improving data storage solutions.

Collaborations

Sokolov has collaborated with notable colleagues such as Bernard Doudin and Cheol-Soo Yang. Their combined expertise has contributed to the development of innovative memory technologies.

Conclusion

Andrei Sokolov's contributions to the field of memory devices highlight the importance of innovation in technology. His patent and ongoing research at the University of Nebraska demonstrate his commitment to advancing the capabilities of non-volatile memory systems.