Louis H Breaux

Title: Louis H Breaux: Innovator in Semiconductor Isolation Structures

Introduction

Louis H Breaux is a notable inventor based in Richardson, TX (US). He has made significant contributions to the field of semiconductor technology, particularly in the area of isolation structures. His innovative methods have paved the way for advancements in semiconductor manufacturing.

Latest Patents

Louis H Breaux holds a patent for a method of forming an isolation structure by performing multiple high-density plasma depositions. This patent describes a process where an isolation trench is formed within a semiconductor body. Following the trench formation, multiple dielectric layers are deposited over the semiconductor body using high-frequency plasma depositions. The first of these layers is deposited at a high-frequency power ranging from approximately 100 watts to approximately 900 watts.

Career Highlights

Breaux is associated with Texas Instruments Corporation, a leading company in semiconductor design and manufacturing. His work at Texas Instruments has been instrumental in enhancing the efficiency and effectiveness of semiconductor devices.

Collaborations

Some of his coworkers include Manuel A Quevedo-Lopez and Jin Zhao, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Louis H Breaux's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the industry. His work continues to influence the development of more efficient semiconductor devices.