Chongqing, China

Long Bai

This inventor holds 1 USPTO granted patent. Top assignees: Chongqing University, Shanghai University. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Long Bai. Retrieved from https://idiyas.com/inventor/long-bai-0wt2d0z6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Long Bai - Innovator in Magnetic Damping Technology.

Introduction

Long Bai is a notable inventor based in Chongqing, China. He has made significant contributions to the field of shock absorption technology. His innovative approach focuses on utilizing the eddy current effect to enhance the performance of shock absorbers.

Latest Patents

Long Bai holds a patent for a single-degree-of-freedom magnetic damping shock absorber based on the eddy current effect. This invention comprises various components, including a lower plate, ring-shaped magnets, an aluminum cylinder, and multiple copper sheets. The design allows for effective damping through the generation of eddy currents, which inhibit the movement of the shock absorber's components.

Career Highlights

Throughout his career, Long Bai has worked at prestigious institutions such as Shanghai University and Chongqing University. His work has focused on advancing technologies that improve mechanical systems and enhance their efficiency.

Collaborations

Long Bai has collaborated with notable colleagues, including Huayan Pu and Wenyuan He. Their joint efforts have contributed to the development of innovative solutions in the field of mechanical engineering.

Conclusion

Long Bai's contributions to the field of magnetic damping technology exemplify his innovative spirit and dedication to advancing engineering solutions. His patent reflects a significant step forward in shock absorber technology, showcasing the potential of eddy current effects in practical applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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