This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Globalfoundries Inc.. Active years: 2016-2018.
Company Filing History:
Years Active: 2016-2018
Title: Lloyd C Litt: Innovator in Metrology Pattern Layout
Introduction
Lloyd C Litt is a notable inventor based in Latham, NY (US). He has made significant contributions to the field of metrology, particularly in the design and application of circuit structures. With a total of 2 patents, his work has had a considerable impact on the industry.
Latest Patents
Lloyd's latest patents include a metrology pattern layout and method of use thereof. This innovative layout features a plurality of quadrants, which include a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern. The arrangement of these patterns facilitates the correlation of reticle metrology data with wafer metrology data. Additionally, the reticle registration pattern incorporates outermost structural elements designed to protect other structural elements within the reticle measurement pattern from modifications during the optical proximity correction process. The method of optical proximity correction allows for the classification and modification of a rule set based on the reticle measurement pattern.
Career Highlights
Lloyd C Litt is currently employed at GlobalFoundries Inc., where he continues to advance his research and development efforts in metrology. His expertise in this area has positioned him as a key player in the semiconductor industry.
Collaborations
Lloyd has collaborated with notable coworkers such as Guoxiang Ning and Guido Ueberreiter. Their combined efforts contribute to the innovative projects at GlobalFoundries Inc.
Conclusion
Lloyd C Litt's contributions to metrology pattern layout and his ongoing work at GlobalFoundries Inc. highlight his importance as an inventor in the semiconductor field. His innovative patents continue to influence the industry and pave the way for future advancements.
