Lixun Gu

Title: Lixun Gu: Innovator in Three-Dimensional Memory Device Technologies

Introduction

Lixun Gu is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory device technologies, particularly in the development of methods for forming channel structures in three-dimensional memory devices. With a total of 2 patents, his work is paving the way for advancements in this critical area of technology.

Latest Patents

Lixun Gu's latest patents include innovative methods for forming channel structures with protective structures in three-dimensional memory devices. One of his notable inventions involves the formation of a memory film and a sacrificial layer along the sidewall and bottom of a channel hole. A protective structure is created to cover a portion of the sacrificial layer, allowing for selective wet etching of the sacrificial layer and memory film. Another patent focuses on methods for forming channel structures with reduced sidewall damage, emphasizing the importance of precision in the manufacturing process of 3D memory devices.

Career Highlights

Lixun Gu is currently employed at Yangtze Memory Technologies Co., Ltd., where he continues to innovate and develop new technologies. His expertise in memory devices has positioned him as a key player in the industry, contributing to the advancement of memory technology.

Collaborations

Lixun Gu has collaborated with notable coworkers, including Xiaofen Zheng and Hongbin Zhu. Their combined efforts in research and development have led to significant advancements in the field of memory devices.

Conclusion

Lixun Gu's contributions to the field of three-dimensional memory devices are noteworthy. His innovative patents and ongoing work at Yangtze Memory Technologies Co., Ltd. highlight his role as a leading inventor in this technology sector.