Staatsburg, NY, United States of America

Lisamarie White

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

where 'Filed Patents' based on already Granted Patents

2 patents (USPTO):

Title: **Innovator Spotlight: Lisamarie White**

Introduction

Lisamarie White, an accomplished inventor based in Staatsburg, NY, has made significant contributions to the field of technology. With two patents to her name, she has focused her efforts on advancing memory storage solutions.

Latest Patents

Lisamarie’s latest inventions include two patented designs for magneto-resistive random access memory. The first patent, titled "Magneto-resistive random access memory with segmented bottom electrode," describes a structure that incorporates a magnetic tunnel junction pillar situated above a partitioned bottom electrode layer. The design utilizes both a metal region and a metal-oxide region, enhancing the efficiency and functionality of memory devices.

Her second patent, "Magneto-resistive random access memory with substitutional bottom electrode," revolves around a magnetic tunnel junction pillar on a bottom electrode consisting of a metal-oxide region, surrounded by a metal region. This innovative arrangement aims to optimize the performance of magnetic tunnel junctions in memory applications.

Career Highlights

Lisamarie White is currently affiliated with the International Business Machines Corporation (IBM). At IBM, she specializes in the development of advanced memory technologies and collaborates with her peers to push the boundaries of innovation in this critical sector.

Collaborations

She has worked alongside esteemed colleagues such as Oscar Van Der Straten and Willie Lester Muchrison, Jr. Their collaboration fosters a creative environment that encourages groundbreaking advancements in the field.

Conclusion

With her impressive track record of innovation and collaboration, Lisamarie White exemplifies the spirit of invention in modern technology. Her contributions to magneto-resistive random access memory are shaping the future of memory storage solutions and solidifying her role as a vital figure in the world of invention.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…