The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12289896 B1

Date of Patent:

Apr. 29, 2025

Filed:

Dec. 15, 2021

Magneto-resistive random access memory with segmented bottom electrode

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Oscar Van Der Straten, Guilderland Center, NY (US);

Willie Lester Muchrison, Jr., Troy, NY (US);

Lisamarie White, Staatsburg, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Matthew Zehrer

Primary Examiner:

Victor A Mandala

Int. Cl.

CPC ...

H10B 61/00 (2022.12); H10N 50/01 (2022.12); H10N 50/80 (2022.12); H10N 50/85 (2022.12);

U.S. Cl.

CPC ...

H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);

Abstract

A magneto-resistive random access memory with segmented bottom electrode includes a magnetic tunnel junction pillar above a first portion of a bottom electrode layer, the first portion of the bottom electrode layer includes a metal region. A sidewall spacer is disposed along sidewalls of the magnetic tunnel junction pillar and above a second portion of the bottom electrode layer including a metal-oxide region. The first portion of the bottom electrode layer composed of the metal region and the second portion of the bottom electrode layer composed of the metal-oxide region form the segmented bottom electrode.

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