Linnan Chen

Title: Linnan Chen: Innovator in Memory Technology

Introduction

Linnan Chen is a notable inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, particularly in non-volatile memory systems. His innovative approach has led to advancements that enhance the efficiency and performance of memory devices.

Latest Patents

Linnan Chen holds a patent for an "Active current consumption save mode for non-volatile memory using fast programming." This patent describes a memory apparatus and method of operation that includes memory cells connected to word lines and disposed in memory holes coupled to bit lines. The apparatus features a control means that applies a series of pulses of a program voltage to selected word lines while simultaneously applying either a bit line program voltage or a bit line inhibit voltage to the corresponding bit lines. This method allows for efficient programming of memory cells with data while maintaining optimal voltage levels.

Career Highlights

Linnan Chen is currently employed at SanDisk Technologies Inc., where he continues to develop innovative memory solutions. His work focuses on improving the performance and reliability of memory devices, making them more efficient for various applications.

Collaborations

Linnan has collaborated with talented coworkers such as Ke Zhang and Liang Li. Their combined expertise contributes to the advancement of memory technology and the successful development of innovative solutions.

Conclusion

Linnan Chen's contributions to memory technology through his patent and work at SanDisk Technologies Inc. highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of non-volatile memory systems.