Kunshan, China

Linlin Sun

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Dynax Semiconductor, Inc.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Linlin Sun. Retrieved from https://idiyas.com/inventor/linlin-sun-brimw2mn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Linlin Sun - Innovator in Semiconductor Technology

Introduction

Linlin Sun is a prominent inventor based in Kunshan, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Linlin Sun holds 1 patent for his invention titled "Semiconductor device, semiconductor chip and method of manufacturing semiconductor device." This patent describes a semiconductor device that includes a substrate, a semiconductor layer, and a configuration of gates, drains, and sources. The design features unequal gate pitches, optimizing the performance of the semiconductor device.

Career Highlights

Linlin Sun is currently employed at Dynax Semiconductor, Inc., where he continues to push the boundaries of semiconductor technology. His work focuses on improving the manufacturing processes and functionalities of semiconductor devices.

Collaborations

Linlin collaborates with Guochun Kang, a talented woman in the field, contributing to advancements in semiconductor research and development.

Conclusion

Linlin Sun's innovative contributions to semiconductor technology exemplify the impact of dedicated inventors in the industry. His work not only advances technology but also inspires future innovations in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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