Lingqian Qian

Title: Lingqian Qian: Innovator in Fluorinated Silicon Oxide Technology

Introduction

Lingqian Qian is a notable inventor based in San Jose, California. He has made significant contributions to the field of materials science, particularly in the development of dielectric layers used in various electronic applications. His innovative approach has led to the creation of a unique method for forming fluorinated silicon oxide layers.

Latest Patents

Lingqian Qian holds a patent for a method of forming a fluorinated silicon oxide layer using plasma. This method involves plasma chemical vapor deposition, where a plasma is created in a chamber, and a combination of silicon-containing gas, fluorine-containing gas, oxygen, and an inert gas is introduced. The gases are excited by the plasma and react near a substrate, resulting in the formation of a fluorinated silicon oxide layer on its surface. This layer exhibits a dielectric constant that is lower than that of traditional silicon oxide layers, making it advantageous for various applications.

Career Highlights

Lingqian Qian is currently employed at Watkins Johnson, a company known for its advancements in electronic materials and technologies. His work has been instrumental in enhancing the performance of dielectric materials used in electronic devices.

Collaborations

Throughout his career, Lingqian Qian has collaborated with esteemed colleagues, including Melvin C. Schmidt and Glenn L. Nobinger. These collaborations have further enriched his research and development efforts in the field of materials science.

Conclusion

Lingqian Qian's innovative contributions to the development of fluorinated silicon oxide layers highlight his expertise and commitment to advancing technology in the electronics industry. His work continues to influence the field and pave the way for future innovations.