The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 1996
Filed:
Feb. 10, 1995
Applicant:
Inventors:
Lingqian Qian, San Jose, CA (US);
Melvin C Schmidt, San Jose, CA (US);
Glenn L Nobinger, Santa Clara, CA (US);
Assignee:
Watkins-Johnson, Palo Alto, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H05N / ;
U.S. Cl.
CPC ...
427574 ; 20419237 ; 427 99 ; 4271261 ; 427578 ; 427579 ; 437228 ; 437238 ;
Abstract
A method of forming a fluorinated silicon oxide dielectric layer by plasma chemical vapor deposition. The method includes the steps of creating a plasma in a plasma chamber and introducing a silicon-containing gas, a fluorine-containing gas, oxygen and an inert gas such that the gases are excited by the plasma and react proximate a substrate to form a fluorinated silicon oxide layer on the surface of the substrate. The fluorinated layer formed has a dielectric constant which is less than that of a silicon oxide layer.