Nagoya, Japan

Linghan Chen

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Linghan Chen in Three-Dimensional Memory Devices

Introduction

Linghan Chen is a notable inventor based in Nagoya, Japan. He has made significant contributions to the field of memory devices, particularly with his innovative approach to three-dimensional memory technology. His work focuses on enhancing the efficiency and performance of memory storage solutions.

Latest Patents

Linghan Chen holds a patent for a three-dimensional memory device that includes aluminum alloy word lines and a method of making the same. This invention features an alternating stack of insulating layers and electrically conductive layers. The electrically conductive layers consist of an intermetallic alloy of aluminum and at least one other metal. Memory openings vertically extend through the alternating stack, and the memory opening fill structures include vertical semiconductor channels and stacks of memory elements.

Career Highlights

Linghan Chen is currently employed at SanDisk Technologies Inc., where he continues to develop cutting-edge memory technologies. His work has led to advancements in the design and functionality of memory devices, contributing to the overall progress in the field of data storage.

Collaborations

Some of his notable coworkers include Raghuveer S Makala and Fumitaka Amano. Their collaborative efforts have further enhanced the research and development of innovative memory solutions.

Conclusion

Linghan Chen's contributions to three-dimensional memory devices exemplify the importance of innovation in technology. His patent and ongoing work at SanDisk Technologies Inc. highlight his role as a key figure in advancing memory storage solutions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…