Urbana, IL, United States of America

Ling Zhou

This inventor holds 1 USPTO granted patent. Top assignee: University of Illinois. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ling Zhou. Retrieved from https://idiyas.com/inventor/ling-zhou-s1z2jid3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Innovations of Inventor Ling Zhou

Introduction

Ling Zhou is an accomplished inventor based in Urbana, IL (US). He has made significant contributions to the field of materials science, particularly in the area of semiconductor technology. His innovative work has led to the development of a unique method for metallizing ohmic electrodes to P-type group III nitrides.

Latest Patents

Ling Zhou holds a patent for a method to metallize ohmic electrodes to P-type group III nitrides. This metallization method utilizes an oxide-forming metal layer to enhance adhesion and mitigate surface contamination or oxides. A high work function metal is subsequently formed on the oxide-forming layer. An anneal process is then conducted to diffuse the high work function metal through the oxide-forming layer. Additionally, one or more metal cap layers may be applied on top of the high work function metal to provide protection.

Career Highlights

Ling Zhou is affiliated with the University of Illinois, where he continues to advance research in semiconductor materials. His work has garnered attention for its potential applications in electronic devices and optoelectronics.

Collaborations

Ling Zhou collaborates with Ilesanmi Adesida, a fellow researcher at the University of Illinois. Their partnership has fostered innovative research and development in the field of materials science.

Conclusion

Ling Zhou's contributions to the field of semiconductor technology through his innovative patent demonstrate his commitment to advancing materials science. His work not only enhances the understanding of metallization processes but also paves the way for future advancements in electronic applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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