Ling Xu

Title: Ling Xu - Innovator in Three-Dimensional NAND Memory Technology

Introduction

Ling Xu is a prominent inventor based in Hubei, China. She has made significant contributions to the field of memory technology, particularly in the development of three-dimensional NAND memory devices. Her innovative approach has led to advancements that enhance the efficiency and performance of memory storage solutions.

Latest Patents

Ling Xu holds a patent titled "Barrier layers for word line contacts in a three-dimensional NAND memory and fabrication methods thereof." This patent outlines a method for forming a three-dimensional memory device. The method includes disposing an alternating dielectric stack on a substrate in a first direction perpendicular to the substrate. It also involves forming a staircase structure and a dividing wall in the alternating dielectric stack. The staircase structure and the dividing wall extend in a second direction parallel to the substrate, with the dividing wall adjacent to the staircase structure. Furthermore, the method includes forming, sequentially on the staircase structure, a first barrier layer and a second barrier layer that differs from the first. Additionally, a gate line slit (GLS) opening is formed in the dividing wall, which penetrates through the alternating dielectric stack in the first direction and is distanced from the second barrier layer in a third direction that is parallel to the substrate and perpendicular to the second direction.

Career Highlights

Ling Xu is currently employed at Yangtze Memory Technologies Co., Ltd., where she continues to push the boundaries of memory technology. Her work has been instrumental in the development of advanced memory solutions that cater to the growing demands of data storage.

Collaborations

Ling Xu collaborates with talented individuals in her field, including her coworkers Di Wang and Zhong Zhang. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in memory technology.

Conclusion

Ling Xu's contributions to three-dimensional NAND memory technology exemplify her dedication to innovation and excellence. Her patent and ongoing work at Yangtze Memory Technologies Co., Ltd. highlight her role as a key player in the advancement of memory solutions.