Ling-Shine Lee

Title: Innovations by Ling-Shine Lee in Semiconductor Technology

Introduction

Ling-Shine Lee is a notable inventor based in Torrance, CA, who has made significant contributions to the field of semiconductor technology. With a focus on enhancing the performance of field effect transistors (FETs), Lee's work has implications for various electronic applications.

Latest Patents

Ling-Shine Lee holds a patent for a method titled "Self-aligned double gate recess for semiconductor field effect transistors." This innovative method involves fabricating a double-recess gate structure for an FET device. The process includes providing a semiconductor wafer with multiple layers, depositing an EBL resist layer, and patterning it to create an opening. A series of etching processes are then performed to form recesses and deposit a gate metal layer, ultimately creating a gate terminal.

Career Highlights

Lee is currently employed at Northrop Grumman Systems Corporation, where he applies his expertise in semiconductor fabrication. His work contributes to advancements in electronic devices and systems, showcasing his commitment to innovation in the field.

Collaborations

Throughout his career, Ling-Shine Lee has collaborated with talented individuals such as Xiaobing Mei and Michael D. Lange. These partnerships have fostered a collaborative environment that enhances the development of cutting-edge technologies.

Conclusion

Ling-Shine Lee's contributions to semiconductor technology through his innovative patent demonstrate his role as a key inventor in the industry. His work continues to influence advancements in electronic devices, showcasing the importance of innovation in technology.