Company Filing History:
Years Active: 2017
Title: Ling Mei Lin - Innovator in High Voltage Transistor Technology
Introduction
Ling Mei Lin is an inventor based in Tainan City, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming high voltage transistors. His innovative approach aims to enhance the performance and efficiency of electronic devices.
Latest Patent Applications
Ling Mei Lin has submitted a patent application titled "METHOD OF FORMING HIGH VOLTAGE TRANSISTOR AND STRUCTURE RESULTING THEREFROM." This method includes several steps: forming a barrier layer in a substrate, depositing a first dielectric layer over the substrate, forming a patterned mask layer over the first dielectric layer, patterning the first dielectric layer into a first sublayer of a gate dielectric layer, converting at least part of the patterned mask layer into a second sublayer of the gate dielectric layer, depositing a second dielectric layer adjacent to the first and second sublayers to serve as a third sublayer of the gate dielectric layer, and depositing a gate electrode over the gate dielectric layer.
Conclusion
Ling Mei Lin's work in high voltage transistor technology showcases his innovative spirit and dedication to advancing semiconductor applications. His contributions may pave the way for future developments in the field.