Dresden, Germany

Lindarti Purwaningsih

USPTO Granted Patents = 1 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Lindarti Purwaningsih: Innovator in Semiconductor Technology

Introduction

Lindarti Purwaningsih is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced processing methods for silicon-germanium (SiGe) formation.

Latest Patents

Lindarti holds a patent for a "Horizontal epitaxy furnace for channel SiGe formation." This innovative method and apparatus provide a solution for recessing a channel region of the PFET and epitaxially growing channel SiGe in the recessed region inside a horizontally oriented processing furnace. The patent outlines a process that includes forming n-channel and p-channel regions on the front side of a wafer, placing the wafers in a horizontally oriented furnace, recessing the p-channel regions, and epitaxially growing cSiGe without hole defects in the recessed p-channel regions.

Career Highlights

Lindarti is currently employed at Globalfoundries Inc., a leading company in semiconductor manufacturing. His work focuses on enhancing the efficiency and effectiveness of semiconductor fabrication processes. His expertise in epitaxial growth techniques has positioned him as a valuable asset in the industry.

Collaborations

Lindarti has collaborated with several talented individuals in his field, including Joanna Wasyluk and Yew Tuck Chow. These collaborations have fostered innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

Lindarti Purwaningsih's contributions to semiconductor technology, particularly through his patent on horizontal epitaxy furnaces, highlight his role as an innovator in the field. His work continues to influence advancements in semiconductor manufacturing processes.

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