Lina Cao

Title: Lina Cao: Innovator in Tunnel Field-Effect Transistors

Introduction

Lina Cao is a prominent inventor based in Notre Dame, IN (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistor devices. Her innovative work has led to the filing of a patent that showcases her expertise and creativity in engineering.

Latest Patents

Lina Cao holds a patent for "Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same." This patent describes a tunnel field-effect transistor device that includes a p-type GaN source layer, an n-type GaN drain layer, and an interlayer interfaced between the source layer and the drain layer. These devices utilize polarization engineering in GaN/InN heterojunctions to achieve appreciable interband tunneling current densities. The interlayer may consist of an Indium Nitride (InN) layer or a graded Indium gallium nitride layer, among other configurations. The design of the tunnel field-effect transistor device can include in-line or side-wall configurations, as well as a nanowire cylindrical gate-all-around geometry to enhance gate electrostatic control.

Career Highlights

Lina Cao is affiliated with the University of Notre Dame Du Lac, where she continues to advance her research in semiconductor devices. Her work has garnered attention for its potential applications in various electronic technologies. With a patent portfolio that includes 1 patent, she is recognized as a leading figure in her field.

Collaborations

Lina has collaborated with notable colleagues such as Patrick Fay and Debdeep Jena, contributing to a dynamic research environment that fosters innovation and discovery.

Conclusion

Lina Cao's contributions to the field of tunnel field-effect transistors exemplify her dedication to advancing semiconductor technology. Her innovative patent reflects her expertise and commitment to engineering excellence.