Province, China

Liang Xu

This inventor holds 1 USPTO granted patent. Top assignee: Hefei Core Storage Electronic Limited. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Liang Xu. Retrieved from https://idiyas.com/inventor/liang-xu-ka9clc1b

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Liang Xu

Introduction

Liang Xu is a notable inventor based in Province, China. He has made significant strides in the field of memory management technology. His work focuses on improving the efficiency of memory storage devices and control circuits.

Latest Patents

Liang Xu holds a patent for a memory management method, memory storage device, and memory control circuit unit. This innovative method involves reading a physical unit and updating its read count. If the updated read count meets a certain threshold, the physical unit is scanned. The method also includes adjusting the read count threshold based on the read count and a read error bit. This approach helps in determining which data units need to be scanned, thereby reducing unnecessary data scanning.

Career Highlights

Liang Xu is currently employed at Hefei Core Storage Electronics Limited. His role at the company allows him to apply his expertise in memory management and contribute to advancements in electronic storage solutions.

Collaborations

Liang has worked alongside talented colleagues such as Xin Hu and Xiaoyang Zhang. Their collaborative efforts have further enhanced the innovative projects at their company.

Conclusion

Liang Xu's contributions to memory management technology exemplify the impact of innovative thinking in the electronics industry. His patent and work at Hefei Core Storage Electronics Limited highlight his commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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