Liang Shi

Title: Liang Shi: Power Semiconductor Device Inventor

Introduction

Liang Shi is an inventor based in Chongqing, China, whose work focuses on power semiconductor device manufacturing. He is associated with Chongqing Alpha and Omega Semiconductor Limited and is named on 3 patents.

Latest Patents

Shi’s recent patent work addresses integrating device functions and simplifying manufacturing processes for power semiconductors.

- **Device Integrating Trench Type Power Device and Source Capacitor and Manufacturing Method Thereof.** This invention integrates a source capacitor and an electrostatic discharge (ESD) diode into a trench-type power device. Its manufacturing process uses existing masks, helping control production costs. Integrating the capacitor can also reduce reliance on external capacitors and save printed circuit board space.

- **SGT MOSFET Device and Manufacturing Method of Contact Holes of SGT MOSFET Device.** This invention describes a shielded-gate-trench (SGT) MOSFET and a process for forming its contact holes. By embedding an ESD structure in advance, the method reduces differences in contact-hole depths and allows the holes to be prepared with one photolithography process. The approach eliminates an additional photolithography step and an ESD polysilicon growth process, reducing manufacturing cost and complexity.

Career Highlights

Shi’s listed inventions demonstrate a focus on practical improvements to power semiconductor design and fabrication. His work combines device integration with process simplification, aiming to reduce component requirements, manufacturing steps, and production costs.

Collaborations

Shi is associated with Chongqing Alpha and Omega Semiconductor Limited. His listed coworkers include Yi Zhao and Fei Peng.

Conclusion

Liang Shi’s patent work centers on integrating functions into power semiconductor devices and streamlining their manufacture, with potential benefits for production costs and circuit-board space.