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Years Active: 2017
Title: The Innovations of Liang-Qi Ouyang
Introduction
Liang-Qi Ouyang is a notable inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of oxide semiconductor films and thin films. With a total of 2 patents, his work has garnered attention in both academic and industrial circles.
Latest Patents
Ouyang's latest patents include a method for creating an oxide semiconductor film and a method for making a tin oxide thin film. The oxide semiconductor film comprises indium (In), cerium (Ce), zinc (Zn), and oxygen (O) elements, with a specific molar ratio of In:Ce:Zn ranging from 2:1:(0.5 to 2). The method involves forming an oxide film on a substrate using a sputtering method and a sputtering target made of InCeZnO. Additionally, his method for making a SnO thin film includes steps such as providing a substrate and a tin oxide sputtering target, followed by sputtering the SnO thin film onto the substrate using a magnetron sputtering method.
Career Highlights
Liang-Qi Ouyang has worked with prestigious institutions, including Tsinghua University and Hon Hai Precision Industry Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking research in semiconductor technology.
Collaborations
Ouyang has collaborated with notable colleagues such as Da-Ming Zhuang and Ming Zhao. Their joint efforts have further advanced the field of semiconductor research and development.
Conclusion
Liang-Qi Ouyang's innovative work in semiconductor technology, particularly through his patents, showcases his expertise and dedication to advancing the field. His contributions continue to influence both academic research and industrial applications.