Suzhou, China

Li Ying

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Freescale Semiconductor,inc.. Active years: 2014.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations by Li Ying in Semiconductor Technology

Introduction

Li Ying is a prominent inventor based in Suzhou, China. She has made significant contributions to the field of semiconductor technology. Her innovative work focuses on optimizing the production processes within the industry.

Latest Patents

Li Ying holds a patent for a "System for optimizing the number of dies produced on a wafer." This system utilizes a die number optimization (DNO) routine to determine the maximum number of dies that can be fabricated on a wafer for a target die area (TDA). The invention generates an initial result list of die shapes that maximize the number of dies for the TDA. Additionally, an optional die size optimization (DSO) routine can be executed to create lists of optimized die shapes based on area utilization for varying TDA sizes. This innovative approach enhances the efficiency of wafer layouts.

Career Highlights

Li Ying is currently employed at Freescale Semiconductor, Inc., where she continues to develop cutting-edge technologies. Her work has garnered attention for its potential to improve manufacturing processes in the semiconductor industry.

Collaborations

Li Ying collaborates with notable colleagues, including Peidong Wang and Zhijun Chen. Their teamwork fosters an environment of innovation and creativity, contributing to advancements in their field.

Conclusion

Li Ying's contributions to semiconductor technology through her patent and collaborative efforts highlight her role as a key innovator in the industry. Her work continues to influence the optimization of manufacturing processes, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
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