Company Filing History:
Years Active: 2023
Title: The Innovative Contributions of Li Xun Gu
Introduction
Li Xun Gu is a prominent inventor based in Wuhan, China. He is known for his significant contributions to the field of memory device technology. His work has led to advancements that are crucial for modern computing.
Latest Patents
Li Xun Gu holds a patent for the "Structure of 3D NAND memory device and method of forming the same." This patent outlines a method for creating a 3D NAND memory device structure. The process includes several steps, such as forming a first stack layer on a substrate and creating channel holes that enhance the device's functionality.
Career Highlights
Li Xun Gu is currently employed at Yangtze Memory Technologies Co., Ltd. His role at the company allows him to work on cutting-edge technologies in the memory sector. His innovative approach has positioned him as a key figure in the development of advanced memory solutions.
Collaborations
Li Xun Gu collaborates with Li Hong Xiao, a talented female engineer. Together, they work on various projects that push the boundaries of memory technology.
Conclusion
Li Xun Gu's contributions to the field of memory devices exemplify the spirit of innovation. His patent and ongoing work at Yangtze Memory Technologies Co., Ltd. highlight his importance in the industry.