Li-Tien Hsueh

Title: Innovations of Li-Tien Hsueh in Three-Dimensional Source Contact Structures

Introduction

Li-Tien Hsueh is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of three-dimensional source contact structures. His innovative approaches have the potential to enhance the performance of power devices.

Latest Patents

Li-Tien Hsueh holds a patent for a process method for fabricating a three-dimensional source contact structure. This method is designed to create a step-like three-dimensional source contact structure in a MOSFET of a power device. The process involves a sequential lithography and shallow trench process to form a metal contact window. Additionally, a lateral etching process or spacers can be utilized to increase horizontal surface contact when depositing a source contact metal. The invention aims to reduce cell pitch effectively and can be widely applied to various power devices with MOSFET structures.

Career Highlights

Li-Tien Hsueh is affiliated with National Yang Ming Chiao Tung University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its practical applications in improving device efficiency and performance.

Collaborations

Li-Tien Hsueh has collaborated with notable colleagues, including Bing-Yue Tsui and Jui-Cheng Wang. Their combined expertise contributes to the innovative research and development in their field.

Conclusion

Li-Tien Hsueh's contributions to the field of semiconductor technology, particularly through his patented process for three-dimensional source contact structures, highlight his role as a leading inventor. His work not only advances academic research but also has practical implications for the future of power devices.