National Yang Ming Chiao Tung University

Li-Tien Hsueh

Bing-Yue Tsui

Jui-Cheng Wang

Jui-Tse Hsiao

A process method for fabricating a three-dimensional source contact structure is provided, which is applicable to form a step-like three-dimensional source contact structure in a MOSFET of a power device. The proposed method sequentially adopts a lithography process and a shallow trench process to form a metal contact window. And a lateral etching process, or spacers which will be removed eventually, can be alternatively provided for increasing horizontal surface contact when depositing a source contact metal. Meanwhile, a longitudinal surface exposed by the shallow trench process is also beneficial to increase vertical contact when depositing the source contact metal. As a result, a step-like three-dimensional source contact structure can be formed by employing the present invention. It is believed that the present invention achieves in reducing cell pitch effectively and can be widely applied to various power devices having MOSFET structure thereof.

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Taipei, Taiwan

Li-Tien Hsueh