Li-Ming Chang

Title: The Innovations of Li-Ming Chang

Introduction

Li-Ming Chang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of power semiconductor devices. His innovative work has led to the development of a unique patent that enhances the efficiency and functionality of semiconductor technology.

Latest Patents

Li-Ming Chang holds a patent for a power semiconductor device and its manufacturing method. This device includes an epitaxial layer of a first conductivity type, a first doped region of a second conductivity type, and a second doped region of the first conductivity type. The design features a contact metal layer, a device electrode, and both first and second termination electrodes. The epitaxial layer comprises an active region and a termination region, with the device electrode located in a device trench within the active region. This configuration ensures electrical isolation from the epitaxial layer and the contact metal layer. The termination electrodes are strategically placed to allow for selective floating, enhancing the device's performance.

Career Highlights

Li-Ming Chang is currently employed at Invinci Semiconductor Corporation, where he continues to innovate in the semiconductor field. His work focuses on developing advanced technologies that improve power semiconductor devices.

Collaborations

Li-Ming Chang collaborates with Hsu-Heng Lee, a talented woman in the field, contributing to the advancement of semiconductor technology through their combined expertise.

Conclusion

Li-Ming Chang's contributions to the semiconductor industry are noteworthy, particularly his patented innovations that enhance device performance. His ongoing work at Invinci Semiconductor Corporation promises to lead to further advancements in this critical technology sector.