Company Filing History:
Years Active: 2014-2015
Title: Innovations of Li Bin Man
Introduction
Li Bin Man is a notable inventor based in Sichuan, China. He has made significant contributions to the field of semiconductor technology, holding 2 patents to his name. His work primarily focuses on methods for enhancing the efficiency and effectiveness of MOS devices.
Latest Patents
One of Li Bin Man's latest patents is titled "Multi-landing contact etching - A method for contacting MOS devices." This innovative method involves forming first openings in a photosensitive material over a substrate with a top dielectric in a first die area. Additionally, a second opening is created over a gate stack in a second die area, which also has a top dielectric, a hard mask, and a gate electrode. The process includes etching the top dielectric layer to form a semiconductor contact while also etching a portion of the hard mask layer thickness over a gate contact area exposed by the second opening. An inter-layer dielectric (ILD) is then deposited, and a photosensitive material is patterned to generate further openings. The ILD is subsequently etched to reopen the semiconductor contact, ensuring a reliable gate contact to the gate electrode.
Career Highlights
Li Bin Man is currently employed at Texas Instruments Corporation, where he continues to innovate and develop new technologies. His work has been instrumental in advancing semiconductor manufacturing processes.
Collaborations
Li Bin Man has collaborated with several talented individuals in his field, including Fei Xie and Wen Cheng Tien, who is a woman. These collaborations have contributed to the successful development of his patents and innovations.
Conclusion
Li Bin Man's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative methods continue to influence the field and pave the way for future advancements.