Leonardo Ravazzi

Title: Leonardo Ravazzi: Innovator in Non-Volatile Memory Technology

Introduction

Leonardo Ravazzi is a prominent inventor based in Dalmine, Italy. He has made significant contributions to the field of non-volatile memory technology, holding a total of 10 patents. His work focuses on enhancing the performance and reliability of memory devices, particularly in the area of flash EEPROM technology.

Latest Patents

Among his latest patents is a groundbreaking invention titled "Flash EEPROM with integrated device for limiting the erase source voltage." This patent describes a flash EEPROM that features an array of memory cells connected by a common source line. The design includes a resistive feedback element that is coupled in series with the common source line, which helps to limit the voltage during the erasure process. Another notable patent is the "Method for localizing point defects causing leakage currents in a non-volatile memory device." This method outlines a systematic approach to identify and localize point defects that lead to leakage currents in memory devices, enhancing their overall reliability.

Career Highlights

Throughout his career, Leonardo Ravazzi has worked with several notable companies, including SGS-Thomson Microelectronics S.r.l. and STMicroelectronics S.r.l. His experience in these organizations has allowed him to develop innovative solutions that address critical challenges in memory technology.

Collaborations

Leonardo has collaborated with esteemed colleagues such as Lorenzo Fratin and Carlo Riva. These partnerships have contributed to the advancement of technology in the field of non-volatile memory.

Conclusion

Leonardo Ravazzi's contributions to the field of non-volatile memory technology are significant and impactful. His innovative patents and collaborations with industry leaders highlight his role as a key figure in advancing memory device technology.