The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 1998

Filed:

Jul. 18, 1995
Applicant:
Inventors:

Lorenzo Fratin, Buccinasco, IT;

Leonardo Ravazzi, Dalmine, IT;

Carlo Riva, Renate, IT;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365182 ; 365185 ; 257191 ; 257192 ; 257194 ;
Abstract

A nonvolatile memory having a cell comprising an N.sup.+ type source region and drain region embedded in a P.sup.- type substrate and surrounded by respective P-pockets. The drain and source P-pockets are formed in two different high-angle boron implantation steps designed to optimize implantation energy and dosage for ensuring scalability of the cell and avoiding impairment of the snap-back voltage. The resulting cell also presents a higher breakdown voltage as compared with known cells.


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