Malvern, United Kingdom

Leonard David Irving

This inventor holds 1 USPTO granted patent. Top assignee: British Secretary of State for Defence. Active years: 1976.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Leonard David Irving. Retrieved from https://idiyas.com/inventor/leonard-david-irving

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: Leonard David Irving: Innovator in Semiconductor Technology

Introduction

Leonard David Irving is a notable inventor based in Malvern, GB. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Irving holds a patent for a device titled "Silver, gallium, and oxygen contact for indium phosphide." This semiconductor transferred electron device incorporates indium phosphide as a major constituent. The device features a cathode made of oxidized silver gallium, which contains four times more silver than gallium by weight. Additionally, the oxygen content in the cathode is maintained at 2 to 20 atomic percent of the gallium content. This advancement provides high electrical to microwave conversion efficiencies for a large proportion of devices produced in any given batch.

Career Highlights

Leonard David Irving is associated with the British Secretary of State for Defence, where he applies his expertise in semiconductor technology. His work has contributed to advancements in the field, enhancing the performance and efficiency of electronic devices.

Collaborations

Irving has collaborated with notable colleagues, including James Edward Pattison and Huw David Rees. Their combined efforts have furthered research and development in semiconductor applications.

Conclusion

Leonard David Irving's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work continues to influence the efficiency of electronic devices, marking him as a significant figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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