Xi'an, China

Leilei Wang

This inventor holds 1 USPTO granted patent. Top assignees: Xi'an Eswin Material Technology Co., Ltd., Xi'an Eswin Silicon Wafer Technology Co., Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Leilei Wang. Retrieved from https://idiyas.com/inventor/leilei-wang-57xk53f0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations by Leilei Wang in Wafer Technology

Introduction

Leilei Wang is an accomplished inventor based in Xi'an, China. He has made significant contributions to the field of wafer technology, particularly through his innovative methods for positioning V-type notches on wafers. His work has implications for the semiconductor industry, where precision is crucial.

Latest Patents

Leilei Wang holds a patent for a "Method and system for positioning center of V-type notch of wafer, and computer storage medium." This patent describes a method that involves determining the center of a concentric circle corresponding to the edges of a V-type notch based on collected edge data. The method also includes assessing the position of the notch relative to a reference scale line to ensure it is at a preset target center position. Additionally, it outlines how to determine the rotation direction and angle of the wafer when the notch is misaligned, allowing for precise adjustments.

Career Highlights

Throughout his career, Leilei Wang has worked with notable companies in the semiconductor sector. He has been associated with Xi'an Eswin Material Technology Co., Ltd. and Xi'an Eswin Silicon Wafer Technology Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to advancements in wafer technology.

Collaborations

Leilei Wang has collaborated with talented individuals in his field, including Xun Lan and Housheng

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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