Guangzhou, China

Lei Wan

This inventor holds 2 USPTO granted patents. Top assignees: Lotes Co., Ltd, South China Normal University. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lei Wan. Retrieved from https://idiyas.com/inventor/lei-wan-rk3n3nik

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2016-2026

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2 patents (USPTO):Explore Patents

Title: Lei Wan - Innovator in Semiconductor Technology

Introduction

Lei Wan is a prominent inventor based in Guangzhou, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. His innovative work has led to the filing of a patent that addresses critical challenges in the efficiency of semiconductor devices.

Latest Patents

Lei Wan holds a patent for a semiconductor epitaxial structure and light-emitting device. This invention discloses an epitaxial structure that includes an electron injection region, a hole injection region, a multi-quantum well active region, and a potential barrier layer for blocking carriers. The invention also features one or more band edge shaping layers, which have different doping types and concentrations compared to adjacent layers. This design allows for the trimming of the band edge shape of the semiconductor energy band through a local built-in electric field. As a result, the carriers in the multi-quantum well active region are distributed uniformly, leading to a decrease in overall Auger recombination and an increase in the effective potential barrier height. This innovation ultimately improves the internal quantum efficiency of the light-emitting device.

Career Highlights

Lei Wan is affiliated with South China Normal University, where he continues to advance his research in semiconductor technology. His work has garnered attention for its potential applications in improving the performance of light-emitting devices. With a focus on enhancing internal quantum efficiency, his contributions are paving the way for more efficient semiconductor solutions.

Collaborations

Lei Wan has collaborated with notable colleagues, including Ting Mei and Naiyin Wang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of semiconductor research.

Conclusion

In summary, Lei Wan is a distinguished inventor whose work in semiconductor technology is making a significant impact. His patented innovations are set to enhance the efficiency of light-emitting devices, showcasing the importance of research and development in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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