Lee M Goldman

Title: Lee M Goldman: Innovator in High Purity Polycrystalline Aluminum Oxynitride

Introduction

Lee M Goldman is a notable inventor based in Alliance, OH (US). He has made significant contributions to the field of materials science, particularly in the development of high purity polycrystalline aluminum oxynitride (AlON) bodies. His innovative methods have applications in semiconductor process chambers, showcasing the importance of his work in advancing technology.

Latest Patents

Goldman holds a patent for a method of making high purity polycrystalline aluminum oxynitride bodies. This patent, titled "Method of making high purity polycrystalline aluminum oxynitride bodies useful in semiconductor process chambers," describes a process for synthesizing and calcining AlON powders with less than 80 ppm of impurities such as Si, Mg, Ca, Na, and K. The method involves milling the AlON powders to reduce their particle size using high purity milling media. The resulting AlON bodies are particularly suitable for components in semiconductor process chambers.

Career Highlights

Goldman is associated with Surmet Corporation, where he continues to innovate and develop advanced materials. His work has positioned him as a key figure in the field, contributing to the growth and advancement of semiconductor technologies.

Collaborations

Goldman has collaborated with notable colleagues, including Suri A Sastri and Sreeram Balasubramanian. These partnerships have fostered a collaborative environment that enhances the research and development of new materials.

Conclusion

Lee M Goldman is a distinguished inventor whose work in high purity polycrystalline aluminum oxynitride has made a significant impact on semiconductor technology. His innovative methods and collaborations continue to drive advancements in the field.