Company Filing History:
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1 out of 41 Years Active: 1995-2000
Title: The Innovative Journey of Lawrence G. Matus
Introduction
Lawrence G. Matus is a prominent inventor based in Amherst, Ohio. With a remarkable portfolio consisting of five patents, Matus has significantly contributed to the field of semiconductor technology. His innovative methods have paved the way for advancements in the production of high-quality crystal surfaces and films.
Latest Patents
Among his latest patents, Matus has developed a method for the growth of crystal surfaces and heteroepitaxial films. This technique focuses on growing atomically-flat surfaces and high-quality low-defect crystal films of semiconductor materials. It allows for the fabrication of improved devices and is particularly effective for elemental semiconductors such as Silicon (Si), and compounds of Groups III and V elements of the Periodic Table, like Gallium Nitride (GaN). Additionally, Matus’s method is appropriate for compounds and alloys of Group IV elements, such as Silicon Carbide (SiC), making it a versatile tool in semiconductor manufacturing.
Career Highlights
Lawrence G. Matus has had a distinguished career, having worked with notable institutions such as the Ohio Aerospace Institute and The United States of America as represented by the Administrator. His rigorous research and practical applications have positioned him as an influential figure in his field, particularly in advancing semiconductor technologies.
Collaborations
Throughout his career, Matus has collaborated with esteemed professionals such as David J. Larkin and Philip G. Neudeck. These collaborations have enhanced his research endeavors and led to significant developments in semiconductor applications, furthering the impact of his work on the industry.
Conclusion
Lawrence G. Matus exemplifies the spirit of innovation through his extensive work and contributions to semiconductor technology. His patented methods are not only groundbreaking but also facilitate advancements in device fabrication. As technology continues to evolve, the impact of Matus’s work will undoubtedly resonate in the future development of high-quality semiconductor materials.