The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 1999
Filed:
Jul. 03, 1997
Applicant:
Inventors:
J Anthony Powell, North Olmsted, OH (US);
David J Larkin, Valley City, OH (US);
Philip G Neudeck, Olmsted Falls, OH (US);
Lawrence G Matus, Amherst, OH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438478 ; 438931 ;
Abstract
A method of growing atomically-flat surfaces and high-quality low-defect crystal films of polytypic compounds heteroepitaxially on polytypic compound substrates that are different than the crystal film. The method is particularly suited for the growth of 3C-SiC, 2H-AlN, and 2H-GaN on 6H-SiC.