This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2000.
Company Filing History:
Years Active: 2000
Title: Innovations by Lawrence Chung-Lei
Introduction
Lawrence Chung-Lei is an accomplished inventor based in Milpitas, CA. He has made significant contributions to the field of chemical vapor deposition technology. His innovative work has led to the development of a unique reactor design that enhances the efficiency of titanium deposition processes.
Latest Patents
Lawrence holds a patent for a "Reactor optimized for chemical vapor deposition of titanium." This invention features a plasma reaction chamber specifically designed for plasma-enhanced chemical vapor deposition using TiCl.sub.4 as the precursor. The reactor includes a perforated showerhead faceplate and a perforated blocker plate, which work together to evenly distribute the atomized TiCl.sub.4. The materials used in the construction of these components are solid nickel, ensuring durability and effectiveness. RF power is applied between the showerhead faceplate and the heater pedestal to excite the processing gas into a plasma. Additionally, a shield ring is incorporated to confine the plasma to the processing region above the wafer, enhancing the overall efficiency of the process.
Career Highlights
Lawrence is currently employed at Applied Materials, Inc., a leading company in the semiconductor and materials engineering industry. His work at Applied Materials has allowed him to focus on advancing technologies that improve manufacturing processes for various materials.
Collaborations
Throughout his career, Lawrence has collaborated with talented individuals such as Salvador P Umotoy and Anh Ngoc Nguyen. These collaborations have contributed to the development of innovative solutions in the field of chemical vapor deposition.
Conclusion
Lawrence Chung-Lei's contributions to the field of chemical vapor deposition technology exemplify his dedication to innovation. His patented reactor design represents a significant advancement in the efficiency of titanium deposition processes.
