This inventor holds 1 USPTO granted patent. Top assignee: Gte Laboratories Incorporated. Active years: 1977.
Company Filing History:
Years Active: 1977
Title: The Innovative Contributions of Lawrence B. Robinson
Introduction
Lawrence B. Robinson is a notable inventor based in Cambridge, MA, recognized for his significant contributions to the field of materials science. His work primarily focuses on the development of methods for growing thin epitaxial layers, which are crucial in various technological applications.
Latest Patents
Robinson holds a patent for a method of growing thin epitaxial layers of a non-linear, optically active material. This innovative technique involves depositing thin film epitaxial layers of mixed oxide compounds on a suitable single crystal substrate. The process is achieved by introducing the substrate into a crucible containing a saturated solution of the oxide(s) in a molten alkali metal halide, with additional undissolved oxide(s) present. The evaporation of the alkali metal halide solvent maintains a supersaturated condition, allowing for the epitaxial deposition of the oxide(s) onto the substrate. The method provides excellent control over both the composition and thickness of the film, which is essential for various applications in electronics and optics.
Career Highlights
Robinson's career is marked by his association with GTE Laboratories Incorporated, where he has made significant strides in research and development. His innovative approaches have contributed to advancements in the field, particularly in the area of thin film technology.
Collaborations
Robinson has worked alongside William Powazinik, collaborating on various projects that have furthered their understanding and application of epitaxial growth techniques.
Conclusion
Lawrence B. Robinson's contributions to the field of materials science, particularly through his patented methods for growing thin epitaxial layers, highlight his role as an influential inventor. His work continues to impact the development of advanced materials and technologies.